Efficient Large-Signal FET Parameter Extraction Using Harmonics (Dec. 1989 [T-MTT])

Afm&act — We present a novel approach to nonlinear large-signaf FET model parameter extraction for GaAs MESFET devices measured under large-signaf condkions. Powerful nonlinear adjoint-based optimizatio~ which employs the harmonic bafance method as the nonlinear circuit simulation technique, simultaneously processes mrdtibias, yultipower inputs, mnki-fundamental-frequency excitations, and mnftiharmonic measurements to uniquely reveaf the parameters of the intrinsic FET. In contrast to other methods by which the model parameters me extracted using dc and small-signal measurements, onr new approach can provide more accurate and refiable large-signaf model parameters extracted under actual operating cond@ions. Tfre mrMfied Materka and Racprzak FET model serves as an example. Numericaf results verify that our approach can effectively determine the parameters of this modeL Inchrding harmonics in parameter extraction results in a reliable huge-siguaf model. Reaf data provided by Texas Instruments have afso been employed. The technique has been implemented in a new program called HarPE.